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APT12M80B APT12M80S 800V, 13A, 0.80 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. TO -2 47 D3PAK APT12M80B APT12M80S D Single die MOSFET G S FEATURES * Fast switching with low EMI/RFI * Low RDS(on) * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant TYPICAL APPLICATIONS * PFC and other boost converter * Buck converter * Two switch forward (asymmetrical bridge) * Single switch forward * Flyback * Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 13 8 45 30 525 6 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 MicrosemiWebsite-http://www.microsemi.com N*m -55 0.11 150 C 300 oz g in*lbf 04-2009 050-8114 Rev B Min Typ Max 335 0.37 Unit W C/W Static Characteristics Symbol VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS TJ = 25C unless otherwise specified Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 6A VGS = VDS, ID = 1mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C APT12M80B_S Typ 0.87 0.55 4 -10 Max Unit V V/C V mV/C A nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 3 0.80 5 100 500 100 VGS = 30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25C unless otherwise specified Test Conditions VDS = 50V, ID = 6A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 11 2470 42 245 115 Max Unit S pF VGS = 0V, VDS = 0V to 533V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 6A, VDS = 400V Resistive Switching VDD = 533V, ID = 6A RG = 4.7 6 , VGG = 15V 60 80 13 41 14 20 60 18 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 13 Unit G S A 45 1.0 840 14 10 V ns C V/ns ISD = 6A, TJ = 25C, VGS = 0V ISD = 6A, VDD = 100V 3 diSD/dt = 100A/s, TJ = 25C ISD 6A, di/dt 1000A/s, VDD = 533V, TJ = 125C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 29.17mH, RG = 10, IAS = 6A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 7.84E-9/VDS^2 + 1.01E-8/VDS + 3.88E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Rev B 050-8114 04-2009 APT12M80B_S 30 V GS 16 = 10V T = 125C TJ = -55C J V V 25 ID, DRAIN CURRENT (A) TJ = 25C 14 GS GS = 10, & 15V = 6, & 6.5V 5.5V 20 ID, DRIAN CURRENT (A) 12 10 8 6 4 2 15 10 TJ = 125C 5V 5 TJ = 150C 4.5V 4V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 NORMALIZED TO VGS = 10V @ 6A 45 VDS> ID(ON) x RDS(ON) MAX. 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 2.5 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 2.0 1.5 TJ = -55C 1.0 TJ = 25C 0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 18 16 TJ = -55C TJ = 125C 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 4,000 1,000 C, CAPACITANCE (pF) Ciss gfs, TRANSCONDUCTANCE 14 12 10 8 6 4 2 0 0 4 6 8 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current ID = 6A TJ = 25C TJ = 125C 100 Coss 10 Crss 2 12 100 200 300 400 500 600 700 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 45 ISD, REVERSE DRAIN CURRENT (A) 40 35 30 25 TJ = 25C 1 0 16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 20 15 10 5 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 04-2009 050-8114 Rev B TJ = 150C 4 2 20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 APT12M80B_S 100 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM IDM 10 13s Rds(on) 100s 1ms 10ms 100ms TJ = 125C TC = 75C DC line 10 Rds(on) 13s 100s 1ms 10ms 100ms DC line 1 1 TJ = 150C TC = 25C Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125 0.1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 0.1 C 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1 0.40 0.35 0.30 0.7 0.25 0.20 0.15 0.3 0.10 SINGLE PULSE 0.05 0 10 -5 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.5 Note: PDM t1 t2 t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 0.1 0.05 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 TO-247 (B) Package Outline e3 100% Sn Plated 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D3PAK Package Outline Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 1.04 (.041) 1.15(.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 04-2009 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev B Gate Drain Source Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 050-8114 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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